? semiconductor components industries, llc, 2006 january, 2006 ? rev. 0 1 publication order number: nstb1002dxv5/d NSTB1002DXV5T1G, nstb1002dxv5t5g preferred devices dual common base?collector bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor t ransistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the NSTB1002DXV5T1G series, two complementary devices are housed in the sot?553 package which is ideal for low power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch tape and reel ? these are pb?free devices maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbo l value unit q1 q2 collector-base voltage v cbo ?40 50 vdc collector-emitter voltage v ceo ?40 50 vdc collector current i c ?200 100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbo l max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance ? junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. fr?4 @ minimum pad marking diagram preferred devices are recommended choices for future use and best overall value. 45 q1 q2 r1 r1 r2 31 2 http://onsemi.com sot?553 case 463b u9 m 1 5 1 5 u9 = specific device code m = date code = pb?free package (note: microdot may be in either location) device package shipping ordering information NSTB1002DXV5T1G sot?553 (pb?free) 4 mm pitch 4000/tape & ree l nstb1002dxv5t5g sot?553 (pb?free) 2 mm pitch 8000/tape & ree l
NSTB1002DXV5T1G, nstb1002dxv5t5g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit q1 transistor: pnp off characteristics collector ?emitter breakdown voltage (note 2) v (br)ceo ?40 ? vdc collector ?base breakdown voltage v (br)cbo ?40 ? vdc emitter ?base breakdown voltage v (br)ebo ?5.0 ? vdc base cutoff current i bl ? ?50 nadc collector cutoff current i cex ? ?50 nadc on characteristics (note 2) dc current gain (i c = ?0.1 madc, v ce = ?1.0 vdc) (i c = ?1.0 madc, v ce = ?1.0 vdc) (i c = ?10 madc, v ce = ?1.0 vdc) (i c = ?50 madc, v ce = ?1.0 vdc) (i c = ?100 madc, v ce = ?1.0 vdc) h fe 60 80 100 60 30 ? ? 300 ? ? ? collector ?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) (i c = ?50 madc, i b = ?5.0 madc) v ce(sat) ? ? ?0.25 ?0.4 vdc base ?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) (i c = ?50 madc, i b = ?5.0 madc) v be(sat) ?0.65 ? ?0.85 ?0.95 vdc small? signal characteristics current ?gain ? bandwidth product f t 250 ? mhz output capacitance c obo ? 4.5 pf input capacitance c ibo ? 10.0 pf input impedance (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) h ie 2.0 12 k voltage feedback ratio (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) h re 0.1 10 x 10 ?4 small ?signal current gain (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) h fe 100 400 ? output admittance (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) h oe 3.0 60 mhos noise figure (v ce = ?5.0 vdc, i c = ?100 adc, r s = 1.0 k , f = 1.0 khz) nf ? 4.0 db switching characteristics delay time (v cc = ?3.0 vdc, v be = 0.5 vdc) t d ? 35 ns rise time (i c = ?10 madc, i b1 = ?1.0 madc) t r ? 35 storage time (v cc = ?3.0 vdc, i c = ?10 madc) t s ? 225 ns fall time (i b1 = i b2 = ?1.0 madc) t f ? 75 q2 transistor: npn off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0, i c = 5.0 ma) i ebo ? ? 0.1 madc 2. pulse test: pulse width 300 s; duty cycle 2.0%.
NSTB1002DXV5T1G, nstb1002dxv5t5g http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) characteristic unit max typ min symbol on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain (v ce = 10 v, i c = 5.0 ma) h fe 80 140 ? collector?emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor r1 33 47 61 k resistor ratio r1/r2 0.8 1.0 1.2 2. pulse test: pulse width 300 s; duty cycle 2.0%. figure 1. derating curve 250 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 833 c/w
NSTB1002DXV5T1G, nstb1002dxv5t5g http://onsemi.com 4 typical electrical characteristics ? pnp transistor figure 2. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c ?55 c
NSTB1002DXV5T1G, nstb1002dxv5t5g http://onsemi.com 5 typical electrical characteristics ? npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 3. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =?25 c 75 c 25 c figure 4. dc current gain figure 5. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 6. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c ?25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 7. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts ) v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =?25 c t a =?25 c
NSTB1002DXV5T1G, nstb1002dxv5t5g http://onsemi.com 6 package dimensions sot?553 xv5 suffix case 463b?01 issue b e m 0.08 (0.003) x b 5 pl a c ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. d e y 12 3 4 5 l 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.50 0.55 0.60 0.020 inches b 0.17 0.22 0.27 0.007 c d 1.50 1.60 1.70 0.059 e 1.10 1.20 1.30 0.043 e 0.50 bsc l 0.10 0.20 0.30 0.004 0.022 0.024 0.009 0.011 0.063 0.067 0.047 0.051 0.008 0.012 nom max 1.50 1.60 1.70 0.059 0.063 0.067 h e 0.08 0.13 0.18 0.003 0.005 0.007 0.020 bsc on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nstb1002dxv5/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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